Controllable Growth of Vertically Aligned Graphene on C-face SiC

Authors

Yu Liu, Institute of Ion Beam Physics and Materials Research, Germany
Lianlian Chen, Beijing Information Science and Technology University, China
Donovan Hilliard, Technological University Dublin, IrelandFollow
Qing-song Huang, Sichuan University, China
Fang Liu, Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Germany
Mao Wang, Institute of Ion Beam Physics and Materials Research, Germany
Roman Böttger, Institute of Ion Beam Physics and Materials Research, Germany
René Hübner, Institute of Ion Beam Physics and Materials Research, Germany
Alpha T. N’Diaye, Lawrence Berkeley National Laboratory, USA
Elke Arenholz Elke Arenholz, Lawrence Berkeley National Laboratory, USA
Viton Heera Viton Heera, HInstitute of Ion Beam Physics and Materials Research, Germany
Wolfgang Skorupa Wolfgang Skorupa, Institute of Ion Beam Physics and Materials Research, Germany
Shengqiang Zhou, Institute of Ion Beam Physics and Materials Research, Germany

Document Type

Article

Disciplines

1.3 PHYSICAL SCIENCES

Abstract

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d0 magnetism is realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.

DOI

https://doi.org/10.1038/srep34814

Recommended Citation

Liu, Y., Chen, L. & Hilliard, D. (2016). Controllable Growth of Vertically Aligned Graphene on C-face SiC. Scientific Reports, vol. 6. doi:10.1038/srep34814

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.