Abstract
A critical aspect of integrated circuit manufacturing is the reliability of the components, in particular the gate oxide of transistors and capacitors. Accelerated stress tests are used for reliability predictions of gate oxides. There are two statistical distributions, which can be applied to stress test failure data, namely the Lognormal or the Weibull distributions. The failure data can fit each distribution equally well. However the use of either distribution will give vastly different lifetime predictions and their correct use is crucial for accurate lifetime prediction. A statistical based test, developed with Monte Carlo data, which is designed to decide if a failure data set has an underlying Lognormal or Weibull distribution is applied to empirical Time Dependent Dielectric Breakdown (TDDB) failure tests. The TDDB tests are carried out on 7nm and 15nm thick gate oxides. The results generated show the necessity of making the correct choice between the two distributions for accurate lifetime prediction and validate the test for different oxide thickness.
Recommended Citation
Prendergast, James; O'Driscoll, Eoin; and Mullen, Ed
(2004)
"Investigation Into The Correct Statistical Distribution For Oxide Breakdown Versus The Oxide Thickness Used In Integrated Circuit Manufacture,"
The ITB Journal:
Vol. 5:
Iss.
1, Article 19.
doi:10.21427/D7974X
Available at:
https://arrow.tudublin.ie/itbj/vol5/iss1/19
DOI
10.21427/D7974X