Document Type

Article

Rights

Available under a Creative Commons Attribution Non-Commercial Share Alike 4.0 International Licence

Disciplines

Electrical and electronic engineering

Abstract

In this study, the processes of back diffusion in Ar subjected to crossed fields are analyzed by using the Monte Carlo simulation method in the E/N range of 50 to 500 Td (1 Td = 1 × 10–17 V cm2) for 0 < B/N < 25 × 10−19 T cm3. At a given constant E/N, escape factors decrease with an increasing crossed, reduced magnetic field B/N. This reduction in the escape factor is more pronounced in the lower E/N range. Furthermore, the mean number of collisions of back scattered electrons is quite large, and at a given E/N, the mean number of collisions decreases as the crossed B/N increases.

DOI

https://doi.org/10.1063/1.4984989

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