Analysis of Strain and Intermixing in Single-Layer Ge/Si Quantum Dots Using Polarized Raman Spectroscopy

Authors

Anna Baranov, Vavilov State Optical Institute, St. Petersburgh
A. V. Federov, Vavilov State Optical Institute, St. Petersburgh
Tatiana Perova, Trinity College Dublin
R. A. Moore, Trinity College Dublin
V. Yam, Institute d'Electronique Fondamentale, Universite Paris Sud
D. Bouchier, Institut d'Electronique Fondamental, Universite Paris-Sud
V. Le Thanh, Centre de Recherche sur les Mecanismes de la Croissance Cristalline
Kevin Berwick, Technological University DublinFollow

Document Type

Article

Rights

Available under a Creative Commons Attribution Non-Commercial Share Alike 4.0 International Licence

Disciplines

Electrical and electronic engineering

Publication Details

Physics Review B., Vol.73, 7, 2006

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DOI:10.1103/PhysRevB.73.075322

Abstract

The built-in strain and composition of as-grown and Si-capped single layers of Ge∕Si dots grown at various temperatures (460–800 °C) are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-induced Si diffusion from the cap layer is occurring. For large dots grown at 700–800 °C the observations are in agreement with a model of the Ge∕Si dot consisting of a Si-rich boundary region and a Ge-rich core.

DOI

https://doi.org/10.1103/PhysRevB.73.075322

Recommended Citation

Baranov, A.V., Fedorov, A.V., Persova, T.S., Moore, R.A., Yam, V., Bouchier, D., Le Thanh, V. and Kevin Berwick : Analysis of Strain and Intermixing in Single-Layer Ge/Si Quantum Dots Using Polarized Raman Spectroscopy. Physics Review B., Vol.73, 7, 2006. DOI:10.1103/PhysRevB.73.075322

Funder

HEA, DIT