Mapping The In-Plane Electric Field Inside Irradiated Diodes

Authors

L. Poley, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
A.J. Blue, SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom
C. Buttar, SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom
V. Cindro, Experimental Particle Physics Department, Joz̆ef Stefan Institute, SI-1000, Ljubljana, Slovenia
C. Darroch, Technological University DublinFollow
V. Fadayev, Santa Cruz Institute for Particle Physics, University of California Santa Cruz, Santa Cruz, CA 95064, USA
J. Fernandez-Tejero, Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, Bellaterra, Barcelona, Spain
C. Fleta, Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, Bellaterra, Barcelona, Spain
C. Helling, Santa Cruz Institute for Particle Physics, University of California Santa Cruz, Santa Cruz, CA 95064, USA
C. Labitan, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
I. Mandic, Experimental Particle Physics Department, Joz̆ef Stefan Institute, SI-1000, Ljubljana, Slovenia
S.N. Santpur, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
D. Sperlich, Physikalisches Institut, Albert-Ludwigs-Universität Freiburg, 79104 Freiburg-im-Breisgau, Germany
M. Ullan, Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, Bellaterra, Barcelona, Spain
Y. Unno, Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801, Japan

Document Type

Article

Rights

Available under a Creative Commons Attribution Non-Commercial Share Alike 4.0 International Licence

Disciplines

2. ENGINEERING AND TECHNOLOGY

Publication Details

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volume 980, 11 November 2020, 164509

Abstract

A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of the Large Hadron Collider at CERN, which will significantly increase the rate of particle collisions and resulting particle tracks. During their operation in the ATLAS detector, sensors for the ITk strip tracker are expected to accumulate fluences up to 1.61015neq/cm2 (including a safety factor of 1.5), which will significantly affect their performance. One characteristic of interest for highly irradiated sensors is the shape and homogeneity of the electric field inside its active area. For the results presented here, diodes with edge structures similar to full size ATLAS sensors were irradiated up to fluences comparable to those in the ATLAS ITk strip tracker and their electric fields mapped using a micro-focused X-ray beam (beam diameter 23m2). This study shows the extension and shape of the electric field inside highly irradiated diodes over a range of applied bias voltages. Additionally, measurements of the outline of the depleted sensor areas allow a comparison of the measured leakage current for different fluences with expectations for the corresponding active areas.

DOI

https://doi.org/10.1016/j.nima.2020.164509

Recommended Citation

Poley, L., Blue, A.J. & Butter, C. (2021). Mapping The In-Plane Electric Field Inside Irradiated Diodes. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 980, no. 164509.