The Effect of High Background and Dead Time of an InGaAs/InP Single-Photon Avalanche Photodiode on the Registration of Microsecond Range Near-Infrared Luminescence

Authors

P. S. Parfenov, ITMO University
A. P. Litvin, ITMO University
D. A. Onishchuk, ITMO University
K. A. Gonchar, Moscow State Lomonosov University
Kevin Berwick, Technological University DublinFollow
A. V. Fedorov, ITMO University
A. V. Baranov, ITMO University

Document Type

Article

Rights

Available under a Creative Commons Attribution Non-Commercial Share Alike 4.0 International Licence

Disciplines

Electrical and electronic engineering

Publication Details

Optics and Spectroscopy 128

Abstract

The effects of a high background count and a microsecond dead time interval on a gated InGaAs/InP single-photon avalanche photodiode (SPAD) during microsecond luminescence decay registration are discussed. It is shown that the background count rate of the SPAD limits its use for time-resolved and steady-spectral measurements, and that a “pile-up” effect appears in the microsecond range.

DOI

https://doi.org/10.1134/S0030400X20050100

Recommended Citation

Parfenov, P.S., Litvin, A.P., Onishchuk, D.A. et al. The Effect of High Background and Dead Time of an InGaAs/InP Single-Photon Avalanche Photodiode on the Registration of Microsecond Range Near-Infrared Luminescence. Opt. Spectrosc. 128, 674–677 (2020). DOI: 10.1134/S0030400X20050100

Funder

Russian Science Foundation