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Low-k materials such as silicon dioxide (SiO2) play an important role in the semiconductor industry. Plasma has become indispensable for advanced materials processing. In this work a treatment of SiO2single crystal by direct current plasma discharge is studied in detail. Offline metrology is conducted for silicon dioxide wafers by Raman scattering, energy-dispersive x-ray spectroscopy, and ellipsometry. Broad Raman peak at around 2800 cm−1 is observed for the treatedSiO2 wafers. Effects of plasma treatment on position of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etch rate sensors, which might be of importance in managing plasma etching processes.
D. Popovic, et al., (2011) Raman scattering analysis of silicon dioxide single crystal treated by direct current plasma discharge. Applied Physics Letters 98/5, 051503 (2011) DOI http://dx.doi.org/10.1063/1.3543838